Progression of n-type base crystalline silicon solar cells

Published: May 1, 2011

By L.J (Bart) Geerligs, Researcher, ECN Solar Energy; Nicolas Guillevin, Researcher, Device Architecture and Integration Group, ECN Solar Energy; Ingrid G. Romijn, Researcher, ECN Solar Energy

This paper reviews the status of solar cell technology based on n-type crystalline silicon wafers. It aims to explain the reasons behind the strong and increasing attention for n-type cells, including the inherent advantages of n-type base doping for high diffusion length, and for the industrialization of designs with good rear-side electronic and optical properties. The focus will be on cells using diffused junctions.

Single Paper

Includes one paper digital access
US$ 21

Photovoltaics International SubscriptionDigital & Archive

Includes 12 months of unlimited digital access to the Photovoltaics International content, full online archive, technical paper collection (over 700), and more.

Includes 2 upcoming issues in digital.

US$ 449 per year

This Website Uses Cookies

By continuing browsing this website you are accepting our Cookie Policy, as well as our Terms of Use and Privacy Policy.