By Christos Monokroussos, TÜV Rheinland, Shanghai, China; Johannes Stang, TÜV Rheinland, Cologne, Germany
High-efficiency (HE) PV technologies, such as heterojunction, back-contact or n-type, can be affected by significant measurement errors compared with conventional technologies; the power measurement of HE crystalline silicon PV modules and cells has therefore been a challenge for the PV industry for at least two decades. To deal with the internal capacitance and the spectral mismatch errors of HE cells and modules, various measurement techniques are currently used: steady-state, multi-flash, dynamic I–V, DragonBack™ and dark I–V and reconstruction methods, to name a few. This paper discusses the challenges and provides guidance for best practice for acquiring accurate measurements.
Includes 12 months of unlimited digital access to the Photovoltaics International content, full online archive, technical paper collection (over 700), and more.
Includes 2 upcoming issues in digital.