Closing the gap with silicon-waferbased technologies: Alkali postdeposition treatment improves the efficiency of Cu(In,Ga)Se2 solar cells

Published: September 1, 2015

By Oliver Kiowski, Centre for Solar Energy and Hydrogen Research Baden-Württemberg (ZSW), Stuttgart, Germany; Theresa M. Friedlmeier, Centre for Solar Energy and Hydrogen Research Baden-Württemberg (ZSW), Stuttgart, Germany; Roland Würz, Centre for Solar Energy and Hydrogen Research Baden-Württemberg (ZSW), Stuttgart, Germany; Philip Jackson, Centre for Solar Energy and Hydrogen Research Baden-Württemberg (ZSW), Stuttgart, Germany; Dimitrios Hariskos, Centre for Solar Energy and Hydrogen Research Baden-Württemberg (ZSW), Stuttgart, Germany

With the introduction of the alkali post-deposition treatment (PDT) for the absorber layer in Cu(In,Ga)Se2 (CIGS)-based solar cells, new efficiency records approaching 22% have become feasible. After gallium incorporation, sodium doping and the three-stage process, this is the next milestone on the CIGS roadmap. In this paper the current understanding of how PDT alters the CIGS surface and affects device parameters is illustrated. A comparative study of cell device parameters from ZSW and the evolution of efficiencies from other institutes and companies with and without PDT is presented.

Single Paper

Includes one paper digital access
US$ 21

Photovoltaics International SubscriptionDigital & Archive

Includes 12 months of unlimited digital access to the Photovoltaics International content, full online archive, technical paper collection (over 700), and more.

Includes 2 upcoming issues in digital.

US$ 449 per year

This Website Uses Cookies

By continuing browsing this website you are accepting our Cookie Policy, as well as our Terms of Use and Privacy Policy.