Atomic layer deposition of Al2O3 for industrial local Al back-surface field (BSF) solar cells

Published: September 1, 2011

By Aude Rothschild, IMEC; Bart Vermang, IMEC; Hans Goverde, IMEC

Al2O3 deposition has received a lot of attention in the last few years for its attractive passivation properties of c-Si surfaces. Within the local Al back-surface field (BSF) cell concept, we considered several avenues of study: surface preparation, thermal stability, charge investigation and the ‘blistering’ phenomenon. The investigations converged on a passivation stack that includes a thin interfacial SiO2 like layer and a thin Al2O3 layer (~10nm), which undergoes a high-temperature anneal (> 600°C). In order for a surface passivation with Al2O3 to be a cost-effective step for the PV industry, a high Al2O3 deposition rate is required. Compared to the different high-throughput tools that have recently emerged on the PV market, such as atomic layer deposition (ALD) and plasma-enhanced chemical vapour deposition (PECVD), our tool screening revealed quite similar results. The differences therefore seem to have an origin primarily in the tool specifications rather than in the achievable Al2O3 material properties.

Single Paper

Includes one paper digital access
US$ 21

Photovoltaics International SubscriptionDigital & Archive

Includes 12 months of unlimited digital access to the Photovoltaics International content, full online archive, technical paper collection (over 700), and more.

Includes 2 upcoming issues in digital.

US$ 449 per year

This Website Uses Cookies

By continuing browsing this website you are accepting our Cookie Policy, as well as our Terms of Use and Privacy Policy.